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Investigations on HI Reduced Graphene Based FET for Photon Detection

TitleInvestigations on HI Reduced Graphene Based FET for Photon Detection
Publication TypeConference Proceedings
Year of Conference2019
AuthorsAnshika, G., G. Shruthi, G. Baishali, V. Radhakrishna, and K.R. Guneshekharan
Conference Name2019 IEEE Photonics Conference, IPC 2019
Date Published2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN Number9781728106151 (ISBN)
KeywordsDepartment of Physics - SOE, Scopus, WoS
Abstract

Reduced graphene oxide-based field effect transistor is fabricated and tested for detection of UV photons in 100-280 nm range. A novel technique is used for reduction of Graphene oxide. The fabricated device showed promising response to UV photons in terms of resistance change in rGO. © 2019 IEEE.

DOI10.1109/IPCon.2019.8908489