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Raman and Ellipsometric Investigation of 570 nm CdTe thin film layer deposited by RF-Sputtering system

TitleRaman and Ellipsometric Investigation of 570 nm CdTe thin film layer deposited by RF-Sputtering system
Publication TypeJournal Article
Year of Publication2019
AuthorsAndra, N. Kumar Redd, H. Mahdieh, V. Payal, and K. N Svetlana
JournalÓPTICA PURA Y APLICADA
Volume52
Pagination1 - 8
Date Published2019
Type of ArticleJournal Article
ISBN Number0030-3917 (ISSN)
KeywordsDepartment of Electronics and Communication Engineering, Scopus, WoS
Abstract

In this work, we characterized the 570 nm CdTe layer deposited on a glass substrate by RF-Magnetron sputtering technique at the substrate temperature of 200oC. Four experimental techniques were used in this study to characterize the thin film layer; Raman spectroscopy, Spectroscopic Ellipsometry, Xray dispersive spectroscopy (EDX) and high-resolution scanning electron microscopy (SEM). An elemental composition, the surface morphology and the phase of the thin film material were discussed. The optical properties such as refractive index, extinction coefficient, and absorption coefficient were investigated for CdTe thin film. The deposited thin film shows the maximum absorption in the visible spectrum which makes it an ideal candidate for photovoltaic applications.

DOI10.7149/OPA.52.2.50127